QSiC™ 1200V SiC Full Bridge Module – GCMX007B120B3H1P

QSiC™ 1200V SiC Full Bridge Module – GCMX007B120B3H1P

by | Dec 23, 2025

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged...
QSiC™ 1200V SiC Half Bridge Module – GCMX007B120B3B1P

QSiC™ 1200V SiC Half Bridge Module – GCMX007B120B3B1P

by | Nov 26, 2025

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged...
QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S7B1

QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S7B1

by | Nov 26, 2025

Features • 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Isolated baseplate Benefits • Lower inductance from reduced package height • Low...
QSiC™ 1200V SiC Half Bridge Module – GCMX3P5B120S7B1

QSiC™ 1200V SiC Half Bridge Module – GCMX2P3B120S7B1

by | Nov 26, 2025

Features • 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Isolated baseplate Benefits • Lower inductance from reduced package height • Low...
QSiC™ 1200V SiC Half Bridge Module – GCMX014B120B2B1P

QSiC™ 1200V SiC Half Bridge Module – GCMX014B120B2B1P

by | Nov 21, 2025

Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • Low switching losses • Low junction to case thermal resistance • Very rugged...